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MBM29DS163BE - (MBM29DS163BE/TE) FLASH MEMORY CMOS 16 M (2 M X 8/1 M X 16) BIT

MBM29DS163BE_1665529.PDF Datasheet


 Full text search : (MBM29DS163BE/TE) FLASH MEMORY CMOS 16 M (2 M X 8/1 M X 16) BIT


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CATALYST[Catalyst Semiconductor]
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Winbond Electronics
WINBOND[Winbond]
S29GL064A11TFIR20 S29GL064A11TFIR22 S29GL016A10FAI 4M X 16 FLASH 3V PROM, 110 ns, PDSO56 LEAD FREE, MO-142EC, TSOP-56
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 1M X 16 FLASH 3V PROM, 100 ns, PBGA64
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 4M X 16 FLASH 3V PROM, 100 ns, PDSO56
2M X 16 FLASH 3V PROM, 100 ns, PBGA56
4M X 16 FLASH 3V PROM, 90 ns, PBGA64
Flash - NOR IC; Memory Type:FLASH; Access Time, Tacc:90ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:48-TSOP; Memory Configuration:64K x 16; Memory Size:64MB; NOR Flash Type:Page Mode Access RoHS Compliant: Yes
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Spansion, Inc.
SPANSION LLC
AT49LV1614AT AT49BV1614AT-90TI AT49BV1614A-90TI AT AT49BV1604A(T)/AT49BV/LV1614A(T) [Updated 3/02. 26 Pages] 16M bit . 2.7-Volt(BV)/ 3.0 - Volt (LV). Sectored Flash. Dual Plane. Top or Bottom Boot
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Atmel Corp.
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122 x 32 pixel format, LED Backlight available 2M X 16 FLASH 3V PROM, 120 ns, PBGA63
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150 x 32 pixel format, LED Backlight available
ECONOLINE: RKZ - Safety standards and approvals: EN 60950 certified, rated for 250VAC (LVD test report)- Custom Solutions Available- 3kVDC & 4kVDC Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
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Hynix Semiconductor, Inc.
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CATALYST[Catalyst Semiconductor]
MX29F001TTC-90 MX29F001TTC-70 MX29F001TTC-12 MX29F 1M-BIT [128K x 8] CMOS FLASH MEMORY 128K X 8 FLASH 5V PROM, 55 ns, PDIP32
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x8 Flash EEPROM x8闪存EEPROM
Macronix International Co., Ltd.
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